SI3905DV Vishay Siliconix, SI3905DV Datasheet
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SI3905DV
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SI3905DV Summary of contents
Page 1
... stg Symbol Typical t 5 sec R R thJA thJA Steady State Steady State R thJL Si3905DV Vishay Siliconix P-Channel MOSFET Limit Unit – 2.5 2 –1.05 1. 0.73 –55 to 150 C Maximum Unit ...
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... Si3905DV Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... 1 800 600 400 200 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si3905DV Vishay Siliconix Transfer Characteristics T = – 125 C 0 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si3905DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...
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... Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 70973 S-61840—Rev. A, 13-Sep-99 New Product –2 – Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 Si3905DV Vishay Siliconix 1 10 2-5 ...