SI5435DC Vishay Siliconix, SI5435DC Datasheet - Page 2

• Manufacturer Part Number: SI5435DC
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2-2
Si5435DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
a
-- Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
V
GS
2.5
= 10 thru 6 V
Symbol
3.0
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
5 V
4 V
3 V
rr
fs
gs
gd
r
f
g
)
3.5
4.0
V
DS
I
V
D
DS
≅ --1 A, V
= --15 V, V
I
F
V
= --24 V, V
V
V
V
V
V
V
V
= --1.1 A, di/dt = 100 A/ms
DS
V
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= --1.1 A, V
= --10 V, I
= V
--5 V, V
= --4.5 V, I
= --15 V, I
= --24 V, V
= --15 V, R
= --15 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= --10 V, I
= --10 V, R
D
= 0 V, T
GS
GS
D
= --250 mA
D
D
GS
GS
L
L
= --4.1 A
= --4.1 A
= --3.1 A
= 20 V
= --10 V
= 15 Ω
= 15 Ω
= 0 V
= 0 V
J
D
30
24
18
12
G
= 85_C
6
0
= --4.1 A
= 6 Ω
0
1
V
GS
Transfer Characteristics
Min
--30
--1
-- Gate-to-Source Voltage (V)
2
0.042
0.070
Typ
--0.8
3
3.6
3.1
16
40
20
30
11
8
5
S-21251—Rev. B, 05-Aug-02
T
C
25_C
Document Number: 71144
= --55_C
4
100
Max
0.050
0.080
--1.2
--1
--5
24
20
10
80
40
60
5
125_C
Unit
nA
mA
mA
nC
ns
Ω
Ω
V
A
S
V
6