SI5445BDC Vishay Siliconix, SI5445BDC Datasheet - Page 3

• Manufacturer Part Number: SI5445BDC
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 73251
S-50133—Rev. A, 24-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
V
= 5.2 A
0.2
GS
On-Resistance vs. Drain Current
= 10 V
3
4
V
= 1.8 V
SD
Q
g
− Source-to-Drain Voltage (V)
I
0.4
D
− Total Gate Charge (nC)
6
− Drain Current (A)
Gate Charge
T
8
J
= 150_C
0.6
9
12
0.8
12
V
V
T
GS
GS
16
J
= 25_C
1.0
15
= 2.5 V
= 4.5 V
1.2
20
18
New Product
2000
1600
1200
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
400
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
On-Resistance vs. Junction Temperature
D
V
I
D
−25
= 2 A
GS
1
= 5.2 A
C
rss
= 4.5 V
1
T
C
V
V
2
0
J
DS
GS
iss
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
3
Capacitance
I
2
D
C
= 5.2 A
oss
Vishay Siliconix
50
4
3
Si5445BDC
75
5
100
6
www.vishay.com
4
125
7
150
5
8
3
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