SI5855DC Vishay Siliconix, SI5855DC Datasheet - Page 4

• Manufacturer Part Number: SI5855DC
• Description: P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Siliconix

www.vishay.com
4
Si5855DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
0.4
J
T
Threshold Voltage
- Source-to-Drain Voltage (V)
= 150_C
J
- Temperature (_C)
25
0.6
50
I
D
0.8
= 250 mA
75
1.0
T
100
0.01
100
J
0.1
10
= 25_C
1
0.1
1.2
125
Limited
r
I
DS(on)
D(on)
150
1.4
New Product
V
Single Pulse
DS
T
Limited
A
Safe Operating Area
= 25_C
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
I
DM
10
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
Limited
0
10
0
-4
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
-3
1
100
V
10
GS
-2
- Gate-to-Source Voltage (V)
Single Pulse Power
Time (sec)
2
10
-1
I
D
= 2.7 A
1
S-31406—Rev. A, 07-Jul-03
3
Document Number: 72232
10
MOSFET
4
100
600
5