3KBP08M Vishay Siliconix, 3KBP08M Datasheet - Page 3
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3KBP08M
Manufacturer Part Number
3KBP08M
Description
Glass Passivated Single-Phase Bridge Rectifier
Manufacturer
Vishay Siliconix
Datasheet
1.3KBP08M.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88888
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
10
0.1
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
10
T
Percent of Rated Peak Reverse Voltage (%)
J
0.5
20
= 125 °C
Instantaneous Forward Voltage (V)
T
30
J
0.6
= 150 °C
40
0.7
T
J
50
T
= 150 °C
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J
0.8
For technical questions within your region, please contact one of the following:
= 25 °C
T
T
J
J
60
= 125 °C
= 25 °C
0.9
70
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.1
90
(15.2)
0.60
MIN.
1.2
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
3KBP005M thru 3KBP08M
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
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= 25 °C
= 50 mVp-p
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100
3