TPC8010-H Toshiba Semiconductor, TPC8010-H Datasheet
TPC8010-H
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TPC8010-H Summary of contents
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... P 1.9 D (Note 2a 1.0 D (Note 2b) E 157 AS (Note 0. 150 150 stg 1 TPC8010-H Unit V V JEDEC ― V JEITA ― A TOSHIBA 2-6J1B Weight: 0.080 g (typ Circuit Configuration °C ° 2002-03-12 Unit: mm ...
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... January to December are denoted by letters respectively.) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) FR-4 25.4 25.4 0.8 (unit: mm) 25°C (initial), L 1.0 mH TPC8010-H (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (unit: mm) ( 2002-03-12 ...
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... gs1 (Ta 25°C) Symbol Test Condition (Note 1) I DRP DSF TPC8010-H Min Typ 1 5.5 A 5.5 11 1020 MHz 120 400 3 ...
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... ( 55° ( – Common source Pulse test 25 100 10 100 ( TPC8010-H I – Common source 25°C Pulse test 5 2 Drain-source voltage V ( – V ...
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... C iss C oss C rss 100 (V) DS – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b 150 200 5 TPC8010-H I – 100 Common source Ta 25°C Pulse test 0.1 0 0.2 0.4 0.6 ...
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... Safe Operating Area 100 I D max (pulse 0.1 *: Single pulse Ta 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 www.DataSheet4U.com Drain-source voltage 0.01 0.1 1 Pulse width ms* 10 ms* V DSS max 1 10 100 ( (2) (1) Single pulse 10 100 1000 (s) TPC8010-H 2002-03-12 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 TPC8010-H 000707EAA 2002-03-12 ...