TPC8010-H Toshiba Semiconductor, TPC8010-H Datasheet - Page 4

• Manufacturer Part Number: TPC8010-H
• Description: Field Effect Transistor
• Manufacturer: Toshiba Semiconductor

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100
0.3
10
40
30
20
10
30
10
8
6
4
2
0
3
1
0
0.1
0
0
Common source
V DS
Pulse test
4
5
10
10 V
Drain-source voltage V
Gate-source voltage V
3
2
1
Ta
Drain current I
2.8
100
1
55°C
2.7
4
2
I
I
|Y
D
D
fs
– V
– V
| – I
100
2.6
2.5
Ta
GS
DS
D
25
6
3
D
55°C
10
25
GS
DS
(A)
Common source
V DS
Pulse test
(V)
(V)
V GS
8
4
10 V
Common
source
Ta
Pulse test
2 V
2.4
2.3
2.2
25°C
100
10
5
4
100
0.8
0.6
0.4
0.2
20
16
12
30
10
8
4
0
1
0
3
1
0.1
0
0
10
2.5
2
0.3
Drain-source voltage V
5
4
Gate-source voltage V
4
Drain current I
4
3
R
V GS
V
5.5
DS (ON)
8
1
I
DS
D
10
– V
4.5 V
– V
6
2.8
DS
I D
GS
– I
12
3
D
11 A
D
GS
8
DS
(A)
Common source
Ta
Pulse test
Common source
Ta
Pulse test
Common source
Ta
Pulse test
V GS
(V)
(V)
25°C
16
25°C
10
25°C
TPC8010-H
10
2.6
2.5
2.4
2.3
2.7
2.1 V
2002-03-12
20
30
12