TPC8010-H Toshiba Semiconductor, TPC8010-H Datasheet - Page 2

• Manufacturer Part Number: TPC8010-H
• Description: Field Effect Transistor
• Manufacturer: Toshiba Semiconductor

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Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t
Thermal resistance, channel to ambient
(t
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
10 s)
10 s)
TPC8010
H
(Note 5)
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
DD
on lower left of the marking indicates Pin 1.
Characteristics
※
24 V, T
(a)
ch
TYPE
25°C (initial), L
(Note 2a)
(Note 2b)
25.4
FR-4
(unit: mm)
25.4
R
R
Symbol
th (ch-a)
th (ch-a)
0.8
1.0 mH, R
Max
65.8
125
G
2
25 , I
°C/W
°C/W
Unit
(b) Device mounted on a glass-epoxy board (b)
AR
11 A
(b)
25.4
FR-4
(unit: mm)
25.4
TPC8010-H
0.8
2002-03-12