RF5152 RF Micro Devices, RF5152 Datasheet - Page 2

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RF5152

Manufacturer Part Number
RF5152
Description
LINEAR POWER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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RF5152
2 of 10
Absolute Maximum Ratings
Supply Voltage
Power Control Voltage (V
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture Sensitivity
Overall
Frequency
Output Power
EVM*
IP3
Gain
Gain Variance
Input Impedance
Output VSWR
Power Detector (P_detect)
Power Supply
Operating Voltage
V
Current Consumption
Quiescent Current
V
Input Return Loss
Turn-on Time**
Notes:
*The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.
**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.
REG
REG
VB3)
(Bias) Voltage (VB1/VB2,
(Bias) Current (Total)
Parameter
Parameter
P
P
OUT
OUT
REG
=18dBm
=8dBm
)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Min.
2.40
300
0.7
3.0
2.7
32
49
85
45
1
JEDEC Level 2
-0.5 to +5.0
-0.5 to +3.5
-40 to +150
-10 to +85
Rating
Specification
600
+5
Typ.
130
700
2.5
0.2
0.9
2.8
3.3
-15
18
33
34
50
75
2
Max.
1000
Unit
2.50
10:1
dBm
170
105
V
3.3
1.5
0.3
1.1
3.6
3.0
-10
mA
37
51
°C
°C
V
6
DC
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Unit
dBm
GHz
±dB
V
V
V
mA
mA
mA
dB
dB
nS
%
Ω
V
DC
DC
DC
Temperature=+25°C, V
V
pulsed at 1% to 100% duty cycle,
circuit per evaluation board schematic
IEEE802.11g
IEEE802.11n
IEEE802.11g modulation, 54Mbit/s, 64QAM,
OFDM modulation
RMS, mean
-11dBm Pin
-15°C to +85°C
Internally Matched Input and Interstage
The PA is stable, no spurs above -43dBm
RF P
V
V
Output stable to within 90% of final gain
Caution! ESD sensitive device.
54Mbps OFDM <2.5% EVM
REG
CC
CC
=+3.3V
=3.3V
OUT
=2.8V, Frequency=2450MHz,
=+18dBm, V
DC
; RF In=OFF; V
Condition
CC
CC
=3.3V,
=3.3V,
Rev A10 DS061221
REG
OFF

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