TIG052TS Sanyo Semicon Device, TIG052TS Datasheet

TIG052TS

Manufacturer Part Number

TIG052TS

Description

N-Channel IGBT

Manufacturer

Sanyo Semicon Device

Datasheet

1.TIG052TS.pdf (5 pages)

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Meier Automation Equipment Co., Limited

Part Number:

TIG052TS

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Meier Automation Equipment Co., Limited

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Download datasheet (109Kb)

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Ordering number : ENA1258

TIG052TS

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : G052

* : Concerning dv/dt (slope of Collector Voltage at the time of Turn-OFF), dv/dt>400v/μs will be 100% screen-detected

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage (DC)

Gate-to-Emitter Voltage (Pulse)

Collector Current (Pulse)

Maximum Collector-to-Emitter dv / dt

Channel Temperature

Storage Temperature

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Cutoff Current

Gate-to-Emitter Leakage Current

•

in the circuit shown as Fig. 1.

Low-saturation voltage.

Low voltag drive (2.5V).

Enhansment type.

Built-in Gate-to-Emitter protection diode.

Mounting Height 1.1mm, Mounting Area 19.2mm

dv / dt guarantee.*

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

V (BR)CES

dV CE / dt

Symbol

V CES

V GES

I CES

I GES

Tstg

N-Channel IGBT

Light-Controlling Flash Applications

I CP

Tch

www.semiconductor-sanyo.com/network

SANYO Semiconductors

I C =2mA, V GE =0V

V CE =320V, V GE =0V

V GE =±6V, V CE =0V

PW≤1ms

PW≤500μs, duty cycle≤0.5%, C M =400μF, V GE =2.5V

V CE ≤320V, starting Tch=25°C

TIG052TS

Conditions

DATA SHEET

80608PJ TI IM TC-00001524

min

400

Ratings

typ

Ratings

--40 to +150

Continued on next page.

max

400

150

400

150

±10

±6

±8

No. A1258-1/5

V / μs

Unit

°C

μA

Datasheet pdf - http://www.DataSheet4U.net/

Related parts for TIG052TS

TIG052TS Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TIG052TS SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...

Page 2

... V CE =10V, f=1MHz Coes V CE =10V, f=1MHz Cres V CE =10V, f=1MHz Electrical Connection 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate SANYO : TSSOP8 + C M =400μ =320V TIG052TS Ratings min typ max 0.4 3.7 3800 Collector 2 : Collector 3 : Collector 4 : Collector ...

Page 3

... Gate-to-Emitter Voltage Gate-to-Emitter Voltage (off 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50 -- Case Temperature °C TIG052TS 3.0 4.0 5.0 6.0 IT13812 Tc=--25 ° IT13814 Tc=75 ° IT13816 50 75 100 125 150 IT13818 200 V CE =5V ...

Page 4

... V GE =2. =320V Tc≤70 ° Collector Current (Pulse TIG052TS 10000 Circuit: refer to Fig 2.5V 320V , 150A 400 μ μ 100 IT13820 Circuit: refer to Fig 2.5V 320V , 150A 400 μ μ ...

Page 5

... Note : TIG052TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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