TIG052TS Sanyo Semicon Device, TIG052TS Datasheet - Page 2

• Manufacturer Part Number: TIG052TS
• Description: N-Channel IGBT
• Manufacturer: Sanyo Semicon Device

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Continued from preceding page.
Package Dimensions
unit : mm (typ)
7006A-007
Fig.1 Large Current R Load Switching Circuit
Note1. Gate Series Resistance R G ≥82Ω is recommended for prolection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2.5V
0V
if dv / dt≤400V / μs is satisfied at customer’s actual set evaluation, R G <82Ω can also be used.
8
1
3.0
R G
Parameter
0.65
5
4
0.25
100kΩ
0.125
R L
TIG052TS
C M =400μF
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
V CE (sat)
V GE (off)
Symbol
Coes
Cies
Cres
+
V CE =10V, I C =1mA
I C =150A, V GE =2.5V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CC =320V
TIG052TS
Conditions
Electrical Connection
8
1
7
2
6
3
5
4
min
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
0.4
Ratings
typ
3800
3.7
58
47
max
1.0
5.5
No. A1258-2/5
Unit
pF
pF
pF
V
V
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