BSS135 Siemens Semiconductor Group, BSS135 Datasheet

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BSS135

Manufacturer Part Number
BSS135
Description
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BSS135.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSS135
Manufacturer:
INFINEON
Quantity:
5 510
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSS135
Manufacturer:
MAXIM
Quantity:
5 510
SIPMOS Small-Signal Transistor
Type
BSS 135 Q67000-S237 E6325: 2000 pcs/carton;
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
Operating and storage temperature range
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
R
N channel
Depletion mode
High dynamic resistance
Available grouped in
D
DS
DS(on)
600 V
0.080 A
60
Ordering
Code
R
GS
= 20 k
V
GS(th)
Tape and Reel
Information
Ammopack
T
T
T
A
A
A
= 42 ˚C
= 25 ˚C
= 25 ˚C
1
Symbol
V
V
V
V
I
I
P
T
R
–
–
D
D puls
j
DS
DGR
GS
gs
tot
thJA
,
T
stg
1
G
Pin Configuration Marking
2
D
Values
600
600
0.080
0.24
1.0
– 55 … + 150
E
55/150/56
14
20
125
3
S
SS135
Unit
V
A
W
˚C
K/W
–
1
BSS 135
Package
TO-92
2
3
04.97

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BSS135 Summary of contents

Page 1

SIPMOS Small-Signal Transistor V 600 0.080 DS(on) N channel Depletion mode High dynamic resistance Available grouped in V GS(th) Type Ordering Tape and Reel Code Information BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Reverse Diode Continuous reverse drain current ˚C A Pulsed reverse drain current ˚C A Diode forward on-voltage 0.16 ...

Page 4

Characteristics ˚C, unless otherwise specified Total power dissipation tot Typ. output characteristics parameter Semiconductor Group Safe operating area A parameter Typ. ...

Page 5

Typ. transfer characteristics parameter Drain-source on-resistance DS(on) j parameter 0. (spread Semiconductor Group ...

Page 6

V Gate threshold voltage GS(th) parameter mA, (spread Drain current = ( ) D A parameter Semiconductor Group Forward ...

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