BSS135 Siemens Semiconductor Group, BSS135 Datasheet - Page 2

• Manufacturer Part Number: BSS135
• Description: SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage
V
Drain-source cutoff current
V
T
T
Gate-source leakage current
V
Drain-source on-resistance
V
Dynamic Characteristics
Forward transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on time
V
I
Turn-off time
V
I
Semiconductor Group
D
D
j
j
GS
DS
DS
GS
GS
DS
GS
GS
GS
DD
DD
= 0.2 A
= 0.2 A
T
j
= 3 V,
= 600 V,
= 25 ˚C
= 125 ˚C
= 30 V,
= 30 V,
=
= 20 V,
= 0 V,
=
=
=
= 25 ˚C, unless otherwise specified.
2
3 V,
3 V,
3 V,
3 V,
I
D
I
I
V
V
D
D
V
V
V
V
I
GS
GS
= 1 mA
V
= 0.01 A
D
DS
t
t
R
DS
DS
DS
on
off
GS
= 0.25 mA
= 3 V ... + 5 V,
= 3 V ... + 5 V,
DS(on)max
, (
, (
= 0
= 25 V,
= 25 V,
= 25 V,
=
t
t
on
off
=
=
3 V
t
,
t
d(off)
d(on)
I
D
f
f
f
= 1 MHz
= 1 MHz
= 1 MHz
= 0.01 A
+
+
t
t
f
r
)
)
R
R
GS
GS
= 50 ,
= 50 ,
Symbol
V
V
R
t
t
t
t
I
I
C
C
C
g
d(on)
r
d(off)
f
DSS
GSS
(BR)DSS
GS(th)
DS(on)
oss
rss
fs
i i ss
2
min.
600
–
–
–
–
0.01
–
–
–
–
–
–
–
1.8
typ.
–
–
–
10
40
0.04
110
8
3
4
10
15
20
Values
1.5
max.
–
100
200
100
60
–
150
12
5
6
15
20
30
0.7
BSS 135
Unit
V
nA
nA
S
pF
ns
A