SIA429DJT Vishay Siliconix, SIA429DJT Datasheet - Page 5
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SIA429DJT
Manufacturer Part Number
SIA429DJT
Description
P-Channel 20 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SIA429DJT.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 385
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
CJ/长电
Quantity:
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67038
S10-2538-Rev. A, 08-Nov-10
30
25
20
15
10
5
0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
20
15
10
5
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA429DJT
www.vishay.com
125
150
5