EM658160 Etron Technology Inc., EM658160 Datasheet

EM658160

Manufacturer Part Number

EM658160

Description

4M x 16 DDR Synchronous DRAM (SDRAM)

Manufacturer

Etron Technology Inc.

Datasheet

1.EM658160.pdf (26 pages)

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Download datasheet (159Kb)

EtronT ech

Etron Confidential

double data rate synchronous DRAM containing 64

Mbits. It is internally configured as a quad 1M x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal, CK).

Data outputs occur at both rising edges of CK and /CK.

Read and write accesses to the SDRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in a

programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command. The EM658160

provides programmable Read or Write burst lengths of 2,

4, 8, full page.

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

Features

• Fast clock rate: 300/285/250/200/166/143/125MHz

• Differential Clock CK & /CK

• Bi-directional DQS

• DLL enable/disable by EMRS

• Fully synchronous operation

• Internal pipeline architecture

• Four internal banks, 1M x 16-bit for each bank

• Programmable Mode and Extended Mode registers

• Individual byte write mask control

• DM Write Latency = 0

• Auto Refresh and Self Refresh

• 4096 refresh cycles / 64ms

• Precharge & active power down

• Power supplies: V

• Interface: SSTL_2 I/O Interface

• Package: 66 Pin TSOP II, 0.65mm pin pitch

Ordering Information

Overview

EM658160TS-3.3

EM658160TS-3.5

EM658160TS-4

EM658160TS-5

EM658160TS-6

EM658160TS-7

EM658160TS-8

- /CAS Latency: 2, 2.5, 3

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

The EM658160 SDRAM is a high-speed CMOS

Part Number

DDQ

Frequency

300MHz

285MHz

250MHz

200MHz

166MHz

143MHz

125MHz

= 3.3V ± 0.3V

= 2.5V ± 0.2V

FAX: (886)-3-5778671

4M x 16 DDR Synchronous DRAM (SDRAM)

Package

TSOP II

provide a self-timed row precharge that is initiated at the

end of the burst sequence. The refresh functions, either

Auto or Self Refresh are easy to use.

EM658160 features programmable DLL option. By

having a programmable mode register and extended

mode register, the system can choose the most suitable

modes to maximize its performance. These devices are

well suited for applications requiring high memory

bandwidth, result in a device particularly well suited to

high

applications.

An auto precharge function may be enabled to

Pin Assignment (Top View)

performance

A10/AP

VDDQ

LDQS

VSSQ

/CAS

/RAS

VDD

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

VDD

LDM

VDD

BS0

BS1

/WE

/CS

main

(Rev. 1.1 Jan./2002)

memory

EM658160

and

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

VSSQ

UDQS

VREF

VSS

UDM

/CK

CKE

A11

VSS

In addition,

graphics

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