STC05IE150HV ST Microelectronics, STC05IE150HV Datasheet

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STC05IE150HV

Manufacturer Part Number
STC05IE150HV
Description
Emitter Switched Bipolar Transistor
Manufacturer
ST Microelectronics
Datasheet
Order Codes
Features
Applications
Description
The
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
November 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
High voltage / high current Cascode
configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHZ
Squared rbsoa, up to 1500 V
Very low C
Very low turn-off cross over time
In compliance with the 2002/93/EC European
Directive
Aux SMPS for three phase mains
Sepic PFC
V
0.6 V
STC05IE150HV
CS(ON)
Part Number
STC05IE150HV
ISS
driven by R
5 A
I
C
is
G
manufactured
= 47 Ω
C05IE150HV
Marking
R
0.12
CS(ON)
W
in
Emitter Switched Bipolar Transistor
Rev 2
Internal Schematic Diagram
ESBT 1500 V - 5 A - 0.12 Ω
TO247-4LHV
Package
TO247-4LHV
STC05IE150HV
Packaging
PRELIMINARY DATA
TUBE
www.st.com
1/7
7

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STC05IE150HV Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Emitter Switched Bipolar Transistor ESBT 1500 0.12 Ω R CS(ON) 0. Ω Internal Schematic Diagram manufactured in Marking C05IE150HV TO247-4LHV Rev 2 STC05IE150HV PRELIMINARY DATA TO247-4LHV Package Packaging TUBE 1/7 www.st.com 7 ...

Page 2

... Thermal Data Symbol R Thermal resistance junction-case____________________Max thj-case 2/7 Parameter = < 5ms) P < 1ms 25°C c Parameter STC05IE150HV Value Unit 1500 ± 178 W -40 to 150 °C 150 °C ...

Page 3

... STC05IE150HV 2 Electrical Characteristics Electrical Characteristics (T Table 3. Symbol Parameter I Collector-source current CS(SS Base-source current BS(OS Source-base current SB(OS Gate-source leakage GS(OS) V Collector-source ON voltage CS(ON current gain FE V Base-source ON voltage BS(ON) V Gate threshold voltage GS(th) C Input capacitance ISS Q Gate-source charge ...

Page 4

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: www.st.com 4/7 STC05IE150HV ...

Page 5

... STC05IE150HV DIM. MIN. A 4. 0.95 b2 2.50 c 0.40 D 23. 15.45 e 2.54 e1 5.08 L 10. 3.55 S TO247-4LHV MECHANICAL DATA mm. TYP 2.50 1.27 1.10 24 21.50 15.60 2.50 18.50 3 5.50 3 Package mechanical data MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75 10.80 2.80 3.65 7734874 5/7 ...

Page 6

... Revision History 4 Revision History Date Revision 30-Jan-2006 30-Nov-2006 6/7 1 Initial release. 2 The document has been reformatted STC05IE150HV Changes ...

Page 7

... STC05IE150HV Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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