STS11NF3LL ST Microelectronics, STS11NF3LL Datasheet - Page 3

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STS11NF3LL

Manufacturer Part Number
STS11NF3LL
Description
N-CHANNEL PowerMESH MOSFET
Manufacturer
ST Microelectronics
Datasheet

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbo l
Symbo l
Symbo l
I
V
SDM
t
t
SD
I
Q
Q
d(of f)
d(on)
RRM
I
Q
Q
t
SD
t
t
rr
gd
r
gs
f
g
rr
( )
( )
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay T ime
Fall T ime
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, see fig.3)
V
V
R
(Resistive Load, see fig.3)
I
I
V
(Resistive Load, see fig.5)
SD
SD
DD
G
DD
DD
G
DD
= 4.7
= 4.7
= 11 A
= 11 A
= 15 V
= 24 V
= 24 V
= 15 V
Test Con ditions
Test Con ditions
Test Con ditions
V
di/dt = 100 A/ s
I
V
D
GS
I
GS
D
T
V
= 5.5 A
j
= 11 A V
GS
= 0
= 150
= 4.5 V
I
D
= 4.5 V
= 5.5 A
o
C
GS
= 4.5 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
2.4
47
60
25
10
10
34
24
40
52
STS11NF3LL
Max.
Max.
Max.
1.5
33
11
44
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/6

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