STS1HNC60 ST Microelectronics, STS1HNC60 Datasheet - Page 3

• Manufacturer Part Number: STS1HNC60
• Description: N-CHANNEL PowerMESH MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
rr
gd
c
r
gs
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7 , V
= 4.7
= 0.4 A, V
= 1.4 A, di/dt = 100A/µs,
= 300V, I
= 480V, I
= 10V, R
= 100V, T
= 480 V, I
Test Conditions
Test Conditions
Test Conditions
V
GS
GS
G
D
D
GS
D
j
= 4.7
= 150°C
= 0.7 A
= 1.4 A,
= 1.4 A,
= 10V
= 10V
= 0
Min.
Min.
Min.
Typ.
Typ.
Typ.
500
950
8.5
2.8
2.8
3.8
25
34
8
8
9
Max.
Max.
Max.
11.5
0.4
1.6
1.6
STS1HNC60
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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