BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 3

• Manufacturer Part Number: BUK9120-48TC
• Description: PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
CLAMPED ENERGY LIMITING VALUE
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
j
SYMBOL PARAMETER
V
g
C
C
C
t
t
t
t
L
L
j
SYMBOL PARAMETER
I
I
V
SYMBOL PARAMETER
W
d on
r
d off
f
DR
DRM
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
fs
d
s
(CL)DSR
SD
iss
oss
rss
DSRS
Drain source clamp voltage
(peak value)
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Non-repetitive drain-source
clamped inductive turn off
energy
CONDITIONS
R
-55 < T
V
V
V
V
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
CONDITIONS
-
-
I
I
CONDITIONS
T
I
R
F
F
D
j
DS
GS
DD
GS
G
G
= 20 A ; V
= 40 A ; V
= 25˚C prior to clamping;
= 20 A; V
= 10 k ; I
= 10 k ; inductive load
= 25 V; I
= 0 V; V
= 30 V; I
= 5 V; R
j
< 175˚C
3
DD
DS
GS
GS
G
D
D
D
= 10 k ;
= 10 A
= 25 A;
< 16 V; V
= 25 V; f = 1 MHz
= 0 V
= 0 V
= 10 A;
GS
= 5 V;
MIN.
MIN.
40
20
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9120-48TC
TYP.
2200
TYP.
0.95
400
215
2.5
7.5
45
53
12
55
60
45
1
-
-
Product specification
MAX.
450
MAX.
MAX.
2900
500
300
208
1.2
55
18
80
85
60
52
-
-
-
-
Rev 1.100
UNIT
mJ
UNIT
UNIT
nH
nH
pF
pF
pF
V
S
A
A
V
V
s
s
s
s