BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 4
BUK9120-48TC
Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
1.BUK9120-48TC.pdf
(9 pages)
Philips Semiconductors
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
ID% = 100 I
ID/A
1000
100
I
120
110
100
Fig.4. Normalised continuous drain current.
10
D
120
110
100
90
80
70
60
50
40
30
20
10
1
90
80
70
60
50
40
30
20
10
0
& I
0
1
Fig.5. Safe operating area. T
Fig.3. Normalised power dissipation.
0
0
PD%
ID%
DM
RDS(ON) =VDS/ID
= f(V
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
DS
); I
60
60
DM
DC
= f(T
single pulse; parameter t
80
80
Tmb / C
Tmb / C
D
mb
/P
10
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Self Clamped
Normalised Power Derating
120
120
= f(T
VDS/V
mb
140
140
mb
= 25 ˚C
)
160
160
GS
10ms
tp =
1 us
10us
100 us
1 ms
100ms
180
180
5 V
100
p
4
ID/A
150
100
Fig.7. Typical output characteristics, T
0.025
0.015
0.005
50
0.03
0.02
0.01
Fig.8. Typical on-state resistance, T
0
0.001
0.01
0
0.1
10
0
RDS(ON)/mOhm
1
VGS/V =
Fig.6. Transient thermal impedance.
Zth/(K/W)
0.5
0.2
0.1
0.05
0.02
0
1E-06
Z
8
R
th j-mb
2
I
DS(ON)
10
20
D
3
= f(V
= f(t); parameter D = t
0.0001
= f(I
6
DS
4
40
); parameter V
D
); parameter V
ID/A
3.5
0.01
t/s
60
6
BUK9120-48TC
P
D
VGS/V =
VDS/V
Product specification
t
p
T
GS
1
GS
80
p
D =
8
/T
j
4
j
= 25 ˚C .
T
= 25 ˚C .
t
p
t
Rev 1.100
100
100
10
4.5
5
6
5
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2