BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 4

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BUK9120-48TC

Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
ID% = 100 I
ID/A
1000
100
I
120
110
100
Fig.4. Normalised continuous drain current.
10
D
120
110
100
90
80
70
60
50
40
30
20
10
1
90
80
70
60
50
40
30
20
10
0
& I
0
1
Fig.5. Safe operating area. T
Fig.3. Normalised power dissipation.
0
0
PD%
ID%
DM
RDS(ON) =VDS/ID
= f(V
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
DS
); I
60
60
DM
DC
= f(T
single pulse; parameter t
80
80
Tmb / C
Tmb / C
D
mb
/P
10
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Self Clamped
Normalised Power Derating
120
120
= f(T
VDS/V
mb
140
140
mb
= 25 ˚C
)
160
160
GS
10ms
tp =
1 us
10us
100 us
1 ms
100ms
180
180
5 V
100
p
4
ID/A
150
100
Fig.7. Typical output characteristics, T
0.025
0.015
0.005
50
0.03
0.02
0.01
Fig.8. Typical on-state resistance, T
0
0.001
0.01
0
0.1
10
0
RDS(ON)/mOhm
1
VGS/V =
Fig.6. Transient thermal impedance.
Zth/(K/W)
0.5
0.2
0.1
0.05
0.02
0
1E-06
Z
8
R
th j-mb
2
I
DS(ON)
10
20
D
3
= f(V
= f(t); parameter D = t
0.0001
= f(I
6
DS
4
40
); parameter V
D
); parameter V
ID/A
3.5
0.01
t/s
60
6
BUK9120-48TC
P
D
VGS/V =
VDS/V
Product specification
t
p
T
GS
1
GS
80
p
D =
8
/T
j
4
j
= 25 ˚C .
T
= 25 ˚C .
t
p
t
Rev 1.100
100
100
10
4.5
5
6
5
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2

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