BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 5
BUK9120-48TC
Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
1.BUK9120-48TC.pdf
(9 pages)
Philips Semiconductors
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
gfs/S
I
ID/A
D
Fig.10. Typical transconductance, T
100
48
47
46
45
44
43
42
41
40
50
40
30
20
10
80
60
40
20
0
= f(V
0
0
0
V(CL)DSR/V
0
V
Fig.9. Typical transfer characteristics.
(CL)DSR
Fig.11. Typical clamping voltage
GS
g
) ; conditions: V
fs
2
= f(I
1
= f(I
20
Tj/C = 175
D
D
); conditions: V
); conditions: R
4
2
VGS/V
40
25
ID/A
6
DS
3
ID/A
= 25 V; parameter T
60
DS
8
G
4
= 10 kOhm
= 25 V
Tmb / degC =
175
-55
25
80
j
10
= 25 ˚C .
5
12
100
6
j
5
Vf/V
50
49
48
47
46
45
44
43
-1.25
-1.35
-1.45
-1.55
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Vf Temp.Coef.= f(K); conditions: I
-1.3
-1.4
-1.5
Fig.14. Typical Vf temperature coefficient
0
V(CL)DSR/V
-50
0
Vf Temperature Coefficient / mV/K
V
Fig.13. Typical Vf of sense diodes
Fig.12. Typical clamping voltage
(CL)DSR
0
Vf = f(K); parameter I
= f(R
5
50
G
); conditions: I
Diode Temperature /C
Diode Temperature /C
50
RG/kOhm
100
BUK9120-48TC
100
10
Product specification
D
f
175
Tmb / degC =
-55
= 10 A
F
25
150
= 250 uA
If/uA =
Rev 1.100
500
250
100
50
25
150
200
15