BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 6

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BUK9120-48TC

Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
Fig.15. Normalised drain-source on-state resistance.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
a = R
2.5
1.5
0.5
V
2.5
1.5
0.5
2
1
0
-100
I
GS(TO)
2
1
-100
D
0
VGS(TO) / V
Rds(on) normlised to 25degC
= f(V
Fig.17. Sub-threshold drain current.
DS(ON)
max.
min.
typ.
Fig.16. Gate threshold voltage.
= f(T
GS)
-50
-50
0.5
/R
; conditions: T
DS(ON)25 ˚C
j
); conditions: I
2%
0
0
1
Tmb / degC
= f(T
Tj / C
typ
50
50
1.5
j
j
); I
= 25 ˚C; V
D
= 1 mA; V
D
Sub-Threshold Conduction
98%
100
100
= 25 A; V
2
150
BUK959-60
BUK959-60
150
DS
DS
GS
= V
2.5
= V
= 5 V
GS
200
200
GS
3
6
Fig.19. Typical turn-on gate-charge characteristics.
VGS/V
V
IF/A
6
5
4
3
2
1
0
0.01
I
100
GS
F
Fig.18. Typical capacitances, C
80
60
40
20
C = f(V
6
5
4
3
2
1
0
0
= f(V
0
= f(Q
0
Fig.20. Typical reverse diode current.
SDS
G
DS
); conditions: I
Tj/C =
); conditions: V
); conditions: V
0.1
0.5
10
175
1
D
20
GS
1
= 50 A; parameter V
GS
VDS = 14V
VDS/V
= 0 V; parameter T
25
VSDS/V
BUK9120-48TC
= 0 V; f = 1 MHz
QG/nC
Product specification
10
iss
1.5
, C
30
oss
VDS = 35V
, C
Rev 1.100
100
rss
.
DS
Ciss
Coss
Crss
j
2
40

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