BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet - Page 6
BUK9120-48TC
Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
1.BUK9120-48TC.pdf
(9 pages)
Philips Semiconductors
February 1998
PowerMOS transistor
Voltage clamped logic level FET with temperature sensing diodes
Fig.15. Normalised drain-source on-state resistance.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
a = R
2.5
1.5
0.5
V
2.5
1.5
0.5
2
1
0
-100
I
GS(TO)
2
1
-100
D
0
VGS(TO) / V
Rds(on) normlised to 25degC
= f(V
Fig.17. Sub-threshold drain current.
DS(ON)
max.
min.
typ.
Fig.16. Gate threshold voltage.
= f(T
GS)
-50
-50
0.5
/R
; conditions: T
DS(ON)25 ˚C
j
); conditions: I
2%
0
0
1
Tmb / degC
= f(T
Tj / C
typ
50
50
1.5
j
j
); I
= 25 ˚C; V
D
= 1 mA; V
D
Sub-Threshold Conduction
98%
100
100
= 25 A; V
2
150
BUK959-60
BUK959-60
150
DS
DS
GS
= V
2.5
= V
= 5 V
GS
200
200
GS
3
6
Fig.19. Typical turn-on gate-charge characteristics.
VGS/V
V
IF/A
6
5
4
3
2
1
0
0.01
I
100
GS
F
Fig.18. Typical capacitances, C
80
60
40
20
C = f(V
6
5
4
3
2
1
0
0
= f(V
0
= f(Q
0
Fig.20. Typical reverse diode current.
SDS
G
DS
); conditions: I
Tj/C =
); conditions: V
); conditions: V
0.1
0.5
10
175
1
D
20
GS
1
= 50 A; parameter V
GS
VDS = 14V
VDS/V
= 0 V; parameter T
25
VSDS/V
BUK9120-48TC
= 0 V; f = 1 MHz
QG/nC
Product specification
10
iss
1.5
, C
30
oss
VDS = 35V
, C
Rev 1.100
100
rss
.
DS
Ciss
Coss
Crss
j
2
40