HAT2070R Renesas Technology, HAT2070R Datasheet - Page 3

• Manufacturer Part Number: HAT2070R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2070R
Main Characteristics
Rev.4.00 Sep 07, 2005 page 3 of 6
0.20
0.16
0.12
0.08
0.04
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
10 V
4.5 V
Gate to Source Voltage
2
4
50
8
4
100
12
6
150
Pulse Test
Pulse Test
V
Ta (°C)
V
I
V
GS
16
D
GS
8
DS
= 10 A
= 3 V
3.5 V
5 A
2 A
4 V
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
0
5
2
1
0.1 0.2 0.5
0.1
0
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
V
Pulse Test
Note 4:
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
= 10 V
Tc = 75°C
Drain Current
1
vs. Drain Current
1
V
1
DS (on)
GS
2
10 V
2
= 4.5 V
3
5
3
10
I
–25°C
10 20
D
25°C
(A)
V
V
30
4
GS
DS
50
(V)
(V)
100
100
5