HAT2070R Renesas Technology, HAT2070R Datasheet - Page 4

• Manufacturer Part Number: HAT2070R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2070R
Rev.4.00 Sep 07, 2005 page 4 of 6
100
Static Drain to Source on State Resistance
50
40
30
20
10
50
20
10
50
40
30
20
10
0
–40
0
0.1 0.2
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
= 12 A
DS
Body-Drain Diode Reverse
V
Gate Charge
GS
0
8
10 V
= 4.5 V
0.5
vs. Temperature
Recovery Time
V
DD
40
16
1
= 25 V
I
di / dt = 50 A / µs
V
D
10 V
GS
= 2 A, 5 A
5 V
2
80
2 A, 5 A, 10 A
24
= 0, Ta = 25°C
V
Qg (nc)
GS
Tc
V
DD
5
DR
120
32
= 25 V
(°C)
10
10 A
10 V
(A)
5 V
160
40
20
20
16
12
8
4
0
10000
3000
1000
200
100
100
300
100
0.3
0.1
50
20
10
30
10
30
10
5
2
3
1
0.1
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
0.2
0.3
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
Tc = –25°C
t f
0.5
Drain Current
1
25°C
20
V
Rg = 4.7 Ω, duty ≤ 1 %
1
GS
t d(on)
Coss
Crss
Ciss
3
= 10 V, V
2
75°C
30
10
I
D
t d(off)
V
Pulse Test
D
DS
V
f = 1 MHz
5
(A)
(A)
DS
GS
= 10 V
40
30
DS
t r
= 10 V
= 0
10
(V)
100
20
50