BTS100 Siemens Semiconductor Group, BTS100 Datasheet

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BTS100

Manufacturer Part Number
BTS100
Description
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Type
BTS 100
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Semiconductor Group
Smart Highside Power Switch
TEMPFET
Features
C
= 85 ˚C,
P channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
V
GS
V
– 50 V
= 10 V,
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
I
– 8 A
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
D
= 30 C
R
0.3
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
Package
TO-220AB
T
stg
Values
– 50
– 50
– 8.0
– 1.5
– 32
– 25
500
40
– 55 ... + 150
E
55/150/56
Pin
20
3.1
75
Ordering Code
C67078-A5007-A2
1
G
2
D
Unit
V
A
W
K/W
C
BTS 100
3
S
04.96

BTS100 Summary of contents

Page 1

Smart Highside Power Switch TEMPFET Features P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type BTS 100 – – Maximum Ratings Parameter Drain-source ...

Page 2

Electrical Characteristics unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage – 0. Gate threshold voltage – ...

Page 3

Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage – Reverse recovery time ...

Page 4

Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...

Page 5

P Max. power dissipation tot Typical output characteristics Parameter : Semiconductor Group Typ. drain-source on-state resistance DS(on) Parameter Safe operating area ...

Page 6

Drain-source on-state resistance DS(on) j Parameter – – Typ. transfer characteristic Parameter : ...

Page 7

I Continuous drain current Parameter: V – Typ. gate-source leakage current GSS C Parameter – Semiconductor Group Forward characteristics ...

Page 8

Transient thermal impedance Parameter : Semiconductor Group thJC p 8 BTS 100 ...

Page 9

TO 220 AB Standard C67078-A5007-A2 9.9 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group Ordering Code TO 220 AB SMD ...

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