BTS100 Siemens Semiconductor Group, BTS100 Datasheet - Page 2

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BTS100

Manufacturer Part Number
BTS100
Description
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Electrical Characteristics
at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Dynamic Characteristics
Forward transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on time
V
R
Turn-off time
V
R
Semiconductor Group
GS
GS
GS
GS
GS
DS
GS
GS
GS
CC
GS
CC
GS
T
j
= 0
=
= 0 V,
= – 20 V,
= – 10 V
= 0
= 0
= 0
= – 30 V,
= 50
= – 30 V,
= 50
= 25 C, unless otherwise specified.
2
V
, I
, V
, V
, V
DS
D
, I
I
DS
DS
DS
D
V
= – 0.25 mA
D
DS
, I
= – 25 V,
= – 25 V,
= – 25 V,
= – 1 mA
t
t
V
R
V
V
on
off
= – 50 V
D
DS
DS(on)max
GS
GS
, (
, (
= – 5 A
t
t
= 0
= – 10 V,
= – 10 V,
on
off
=
=
,
f
f
f
t
t
d(on)
d(off)
I
= 1 MHz
= 1 MHz
= 1 MHz
T
T
T
T
D
j
j
j
j
= – 5 A
= 25 C
= 150 C
= 25 C
= 150 C
+
+
I
I
D
D
t
t
r
f
)
)
= – 2.9 A,
= – 2.9 A,
Symbol
V
V
R
g
C
C
C
t
t
t
I
I
t
d(on)
d(off)
f
fs
r
DSS
GSS
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
2
min.
– 50
– 2.5
1.5
typ.
– 3.0
– 1
– 100
– 10
– 2
0.25
2.3
900
350
130
20
60
70
55
Values
max.
– 3.5
– 10
– 300
– 100
– 4
0.3
4.0
1200
550
230
30
95
90
75
BTS 100
Unit
V
nA
S
pF
ns
A
A