US5U1 Rohm, US5U1 Datasheet - Page 2

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US5U1

Manufacturer Part Number
US5U1
Description
2.5V Drive Nch+SBD MOSFET
Manufacturer
Rohm
Datasheet

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Transistors
∗1 Mounted on a ceramic board
∗Pulsed
<MOSFET and Di>
Total power dissipation
Range of storage temperature
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
<Body diode characteristics (Source-drain)>
Forward voltage
<Di>
Forward voltage
Reverse current
Electrical characteristics (Ta=25°C)
Parameter
Parameter
Parameter
charge
charge
Parameter
V
Symbol
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
V
DSS
I
t
t
oss
SD
R
iss
rss
r
f
gs
gd
fs
F
g
Min.
Min.
Min.
0.5
1.5
30
Symbol
Tstg
P
Typ.
Typ.
D
Typ.
170
180
240
1.6
0.5
0.3
80
14
12
15
7
9
6
∗1
Max.
Max.
Max.
0.36
0.47
100
240
250
340
1.2
1.5
2.2
−55 to +150
10
1
Limits
1.0
Unit
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
S
I
I
I
I
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
S
S
S
S
D
D
D
D
D
D
= 0.75A, V
= 0.1A
= 0.5A
= 20V
GS
DS
DS
DS
DS
GS
DD
GS
DD
= 1mA, V
= 1.5A, V
= 1.5A, V
= 1.5A, V
= 0.75A
L
G
= 1.5A
L
= 20Ω
= 10Ω, R
=10Ω
=12V, V
= 30V, V
= 10V, I
= 10V, I
= 10V
=0V
= 4.5V
W / TOTAL
15V, V
15 V
Unit
°C
Conditions
Conditions
Conditions
GS
GS
GS
GS
G
D
D
DS
GS
GS
= 10Ω
= 1mA
= 1.5A
GS
=0V
= 4.5V
= 4V
= 2.5V
=0V
=0V
=0V
= 4.5V
Rev.A
US5U1
2/3

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