US5U1 Rohm, US5U1 Datasheet - Page 3

• Manufacturer Part Number: US5U1
• Description: 2.5V Drive Nch+SBD MOSFET
• Manufacturer: Rohm

Transistors
Electrical characteristics curves
1000
100
10
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
0.01
0.01
1
0
Fig.1 Switching Characteristics
td(on)
GATE-SOURCE VOLTAGE : V
1
Fig.4 Static Drain-Source
Ta=125°C
Fig.7 Static Drain-Source
td(off)
tr
−25°C
2
DRAIN CURRENT : I
DRAIN CURRENT : I
75°C
25°C
On-State Resistance vs.
Gate source Voltage
3
tf
0.1
0.1
On-State Resistance
vs. Drain Current ( ΙΙ )
4
5
6
1
1
7
D
D
(A)
(A)
8
Ta=25°C
Pulsed
GS
Ta=25°C
V
V
R
Pulsed
V
Pulsed
DD
GS
G
GS
=10Ω
(V)
=15V
=4.5V
=4.0V
9
10
10
10
0.1
6
5
4
3
2
1
0
10
Fig.2 Dynamic Input Characteristics
0.01
0
1
0.01
Ta=25°C
V
I
R
Pulsed
0.1
10
D
DD
=1.5A
G
1
0.0
=10Ω
=15V
TOTAL GATE CHARGE : Qg (nC)
Ta=125°C
Fig.8 Static Drain-Source
SOURCE-DRAIN VOLTAGE : V
−25°C
0.5
DRAIN CURRENT : I
75°C
25°C
Fig.5 Source Current vs.
Ta=125°C
0.1
On-State Resistance
vs. Drain Current ( ΙΙΙ )
−25°C
75°C
25°C
0.5
Source-Drain Voltage
1
1
D
1.5
1.0
(A)
V
Pulsed
GS
=2.5V
SD
V
Pulsed
GS
(V)
2
10
=0V
1.5
0.001
0.01
0.1
10
0.1
1
Fig.3 Typical Transfer Characteristics
0.0
10
0.01
1
GATE-SOURCE VOLTAGE : V
0.1
10
0.01
1
V
Fig.9 Static Drain-Source
V
V
0.5
GS
GS
GS
=2.5V
=4.5V
DRAIN CURRENT : I
=4V
Ta=125°C
Ta=125°C
Fig.6 Static Drain-Source
0.1
On-State Resistance
vs. Drain Current ( Ι )
−25°C
−25°C
75°C
25°C
1.0
75°C
25°C
DRAIN CURRENT : I
Rev.A
0.1
On-State Resistance
vs. Drain Current ( Ι )
1.5
US5U1
1
D
(A)
2.0
V
Pulsed
GS
1
Ta=25°C
Pulsed
DS
D
(V)
=10V
(A)
V
Pulsed
3/3
2.5
GS
10
=4.5V
10