MTP6N60 ST Microelectronics, MTP6N60 Datasheet - Page 3

• Manufacturer Part Number: MTP6N60
• Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
(di/dt)
Symbol
Symbol
I
V
t
SDM
t
I
r(Vof f)
S D
Q
Q
d(on)
I
Q
RRM
Q
S D
t
t
t
t
rr
gs
gd
c
r
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 50
= 50
= 50
= 6 A
= 6 A
= 300 V
= 480 V
= 480 V
= 480 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
di/dt = 100 A/ s
V
V
GS
GS
I
I
I
V
V
I
D
D
D
D
T
= 0
GS
GS
= 10 V
j
= 3 A
= 6 A
= 6 A
= 6 A
= 150
= 10 V
= 10 V
Thermal Impedance
o
V
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
13.5
140
240
100
145
750
50
78
41
27
38
8
Max.
Max.
Max.
175
125
180
3.8
65
98
34
24
2
MTP6N60
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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