STW5NB100 ST Microelectronics, STW5NB100 Datasheet - Page 2

• Manufacturer Part Number: STW5NB100
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

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DataSheet
4
U
STW5NB100
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/5
.com
Symbol
Symbol
V
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
thc-sink
C
thj-amb
I
I
C
E
DS(on)
C
GS(th)
D(on)
fs
I
GSS
DSS
T
AR
oss
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
o
V
V
V
V
V
V
AR
Parameter
max)
D
C
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= Max Rating
= Max Rating
= V
> I
= 10 V
> I
= 25 V
=
= 10 V
case
DD
D(on)
D(on)
DataSheet4U.com
GS
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
f = 1 MHz
V
o
= 250 A
I
D
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 2 A
= 0
T
V
I
c
GS
D
= 125
= 2 A
= 0
Max
Max
Typ
1000
Min.
Min.
Min.
4.3
1.5
3
Max Value
1400
Typ.
Typ.
Typ.
0.78
62.5
117
300
373
0.5
4.3
4
4
3
7
Max.
Max.
Max.
1800
152
4.4
50
10
100
1
5
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
nA
mJ
pF
pF
pF
o
V
V
A
S
A
C
A
A