TK12A60U Toshiba Semiconductor, TK12A60U Datasheet

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TK12A60U

Manufacturer Part Number
TK12A60U
Description
Field Effect Transistor Silicon N-Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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Quantity
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Part Number:
TK12A60U
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
www.DataSheet.in
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Handle with care.
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Characteristics
= 90 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 3.0 to 5.0 V (V
= 25°C (initial), L = 0.84 mH, R
(Note 1)
(Note 1)
= 100 μA (V
(Note 2)
(Note 3)
(Ta = 25°C)
: R
: ⎪Y
Symbol
DS
V
V
TK12A60U
V
E
E
T
I
I
T
DGR
P
DSS
GSS
DP
AR
DS (ON)
I
AS
AR
stg
D
ch
DS
R
R
D
fs
= 600 V)
Symbol
th (ch-c)
th (ch-a)
⎪ = 7.0 S (typ.)
= 10 V, I
= 0.36 Ω (typ.)
-55 to 150
D
Rating
600
600
±30
150
3.5
12
24
35
69
12
= 1 mA)
1
G
3.57
62.5
Max
= 25 Ω, I
Unit
mJ
mJ
AR
°C/W
°C/W
°C
°C
W
Unit
V
V
V
A
A
= 12 A
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1: Gate
2: Drain
3: Source
1
2-10U1B
TK12A60U
SC-67
2009-09-29
Unit: mm
2
3

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TK12A60U Summary of contents

Page 1

... 3 150 ch T -55 to 150 stg Symbol Max R 3.57 th (ch-c) R 62.5 th (ch- Ω 25°C (initial 0.84 mH TK12A60U Unit Gate 2: Drain 3: Source W mJ ⎯ JEDEC A JEITA SC-67 mJ TOSHIBA 2-10U1B °C Weight : 1.7 g (typ.) °C Unit °C/W °C ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 TK12A60U Min Typ. Max Unit ⎯ ...

Page 3

... 100 −55° (V) GS ⎪Y ⎪ − −55°C 25 100 1 10 100 ( TK12A60U I – Common source 25°C Pulse test Drain−source voltage V (V) ...

Page 4

... 120 160 C – iss C oss C rss 1 10 100 (V) DS − 120 160 4 TK12A60U − 100 Common source Tc = 25°C Pulse test 0.1 −0.3 −0.6 −0.9 0 Drain−source voltage V (V) DS − ...

Page 5

... Single pulse 10μ 100μ 1m 10m Pulse width t w (s) 100 μ operation Tc = 25°C V DSS max 10 100 1000 ( TK12A60U Duty = t (ch-c) = 3.57°C/W 100m – 100 100 125 Channel temperature (initial) T ...

Page 6

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. www.DataSheet.in 6 TK12A60U 2009-09-29 ...

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