TK12A60U Toshiba Semiconductor, TK12A60U Datasheet - Page 4

• Manufacturer Part Number: TK12A60U
• Description: Field Effect Transistor Silicon N-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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10000
1000
100
1.2
0.8
0.6
0.4
0.2
10
50
40
30
20
10
−80
1
0
1
0.1
0
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Pulse test
Drain−source voltage V
−40
Case temperature Tc (°C)
Case temperature Tc (°C)
40
1
0
R
DS (ON)
C – V
P
D
40
80
− Tc
6
DS
– Tc
12
80
10
I D = 3 A
DS
120
(V)
120
C rss
C iss
C oss
160
100
160
4
500
400
300
200
100
100
0.1
10
−80
0
1
5
4
3
2
1
0
0
0
V DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Tc = 25°C
Pulse test
Drain−source voltage V
−40
Case temperature Tc (°C)
Total gate charge Q
4
−0.3
10
Dynamic input/output
5
0
characteristics
I
8
3
DR
V
V DD = 100V
th
−0.6
− V
40
− Tc
1
V GS
DS
12
V GS = 0 V
200
80
g
DS
−0.9
Common source
I D = 12 A
Tc = 25°C
Pulse test
(nC)
TK12A60U
16
400
(V)
120
2009-09-29
−1.2
160
20
20
16
12
8
4
0