BUZ100L Siemens Semiconductor Group, BUZ100L Datasheet
BUZ100L
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BUZ100L Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type V DS BUZ ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage 120 ...
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Power dissipation tot C 260 W 220 P tot 200 180 160 140 120 100 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µs p 140 P = 250W tot 120 I 110 D 100 ...
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Typ. drain-source on-resistance (on) D parameter 0.055 a b 0.045 R DS (on) 0.040 0.035 0.030 0.025 0.020 0.015 0.010 [V] = [ ...
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Avalanche energy parameter µH GS 260 mJ 220 E AS 200 180 160 140 120 100 80 60 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 100L 07/96 ...