BUZ100L Siemens Semiconductor Group, BUZ100L Datasheet - Page 7

• Manufacturer Part Number: BUZ100L
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
Typ. drain-source on-resistance
R
parameter: V
R
C
DS (on)
DS (on)
0.055
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
10
10
pF
4
3
2
0
DS
0
=
V
V
V
GS
GS
GS
2.0
2.5
3.0
)
a
a
a
I
5
[V] =
[V] =
[V] =
D
GS
GS
3.5
b
20
)
a
= 0V, f = 1MHz
10
4.0
c
4.5
d
40
15
5.0
e
b
20
5.5
f
60
6.0
g
25
c
7.0
80
h
30
8.0
i
10.0
j
A
d
I
D
V
V
i
C
C
C
DS
e
g
oss
rss
iss
j
h
f
40
120
7
Forward characteristics of reverse diode
I
parameter: T
Gate threshold voltage
V
parameter: V
V
F
I
F
GS(th)
GS (th)
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
0.0
SD
3
2
1
0
V
-60
= ( T
)
0.4
j
, t
j
GS
)
-20
p
= V
= 80 µs
0.8
DS
20
1.2
, I
T
T
T
T
j
j
j
j
D
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
98%
typ
2%
= 1 mA
60
1.6
2.0
100
BUZ 100L
2.4
07/96
°C
V
T
SD
j
V
3.0
180