BUZ100SL-4 Siemens Semiconductor Group, BUZ100SL-4 Datasheet
BUZ100SL-4
Related parts for BUZ100SL-4
BUZ100SL-4 Summary of contents
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SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • rated Type V DS BUZ 100SL Maximum Ratings Parameter Continuous drain current one channel active °C ...
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Thermal Characteristics Parameter Thermal resistance, junction - soldering point Thermal resistance, junction - ambient 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current, pulsed °C A Inverse diode forward voltage 14 ...
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Power dissipation tot A 2.8 W 2.4 P 2.2 tot 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 140 Semiconductor Group Preliminary data Drain current ...
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Typ. output characteristics parameter µ ° tot ...
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Drain-source on-resistance (on) j parameter 7 0.065 0.055 R DS (on) 0.050 0.045 0.040 0.035 98% 0.030 typ 0.025 0.020 0.015 0.010 0.005 0.000 -60 ...
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Avalanche energy parameter 7 13 400 mJ 320 E AS 280 240 200 160 120 ...