BUZ101L Siemens Semiconductor Group, BUZ101L Datasheet
BUZ101L
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BUZ101L Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type V DS BUZ 101L ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 110 tot 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µ 100W tot 0.0 1.0 ...
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Typ. drain-source on-resistance (on) D parameter 0. 0. (on) 0.14 0.12 0.10 0.08 0.06 0. [V] = [ 0.02 ...
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Avalanche energy parameter µ ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 101L 07/96 ...