BUZ101L Siemens Semiconductor Group, BUZ101L Datasheet - Page 2

• Manufacturer Part Number: BUZ101L
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
DS
GS
GS
= 50 V, V
= 50 V, V
= 50 V, V
= 0 V, I
= 20 V, V
= 5 V, I
V
DS,
I
D
D
D
= 1 mA
= 0.25 mA, T
GS
GS
GS
= 14.5 A
DS
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V
j
j
j
= 25 °C
= -40 °C
= 150 °C
j
= -40 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
Symbol
T
T
R
R
j
stg
thJC
thJA
min.
-
-
-
-
-
50
1.2
Values
typ.
-
1.6
0.1
1
10
10
0.045
-55 ... + 175
-55 ... + 175
55 / 175 / 56
Values
E
1.5
75
max.
-
2
1
100
100
100
0.06
BUZ 101L
07/96
Unit
°C
K/W
Unit
V
µA
nA
µA
nA