BUZ103S Siemens Semiconductor Group, BUZ103S Datasheet
BUZ103S
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BUZ103S Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • 175°C operating temperature • also in SMD available V Type DS BUZ 103 Maximum Ratings Parameter Continuous drain ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = ...
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Power dissipation tot tot 100 120 140 Safe operating area parameter ...
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Typ. output characteristics parameter µ ° 75W tot ...
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Drain-source on-resistance (on) j parameter 0.13 0.11 R 0.10 DS (on) 0.09 0.08 0.07 0.06 98% 0.05 typ 0.04 0.03 0.02 0.01 0.00 -60 -20 ...
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Avalanche energy parameter 291 µH GS 150 mJ 130 120 E AS 110 100 ...