BUZ103S Siemens Semiconductor Group, BUZ103S Datasheet - Page 6

• Manufacturer Part Number: BUZ103S
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
= V
2 x I
70
60
55
50
45
40
35
30
25
20
15
10
70
50
40
30
20
10
A
A
5
0
0
0.0
DS
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 75W
= 80 µs , T
1.0
DS(on)max
2
l
3
2.0
4
k
j
= 25 °C
j
D
5
3.0
= f (V
6
GS
7
4.0
)
i
g
e
c
a
h
f
d
b
8
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
DS
GS
V
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
5.5
10
6
Typ. drain-source on-resistance
R
parameter: t
R
DS (on)
DS (on)
0.13
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
= I
V
V
V
GS
GS
GS
4.0
4.5
5.0
a
a
a
p
[V] =
[V] =
[V] =
D
a
10
5.5
= 80 µs, T
b
)
6.0
c
b
20
6.5
d
c
7.0
e
j
30
= 25 °C
d
7.5
f
8.0
g
e
40
9.0
h
f
10.0
i
50
BUZ 103 S
30/Jan/1998
20.0
SPP31N05
j
I
g
D
A
j
h
i
65