BUZ104 Siemens Semiconductor Group, BUZ104 Datasheet

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BUZ104

Manufacturer Part Number
BUZ104
Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BUZ104.pdf (9 pages)

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SIPMOS
Semiconductor Group
• N channel
• Enhancement mode
• Avalanche-rated
• d v /d t rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 104
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
L = 114 µH, T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
S
C
C
jmax
C
= 17.5 A, V
= 17.5 A, V
= 29 °C
= 25 °C
= 25 °C
= 175 °C
®
Power Transistor
j
DS
DD
= 25 °C
V
50 V
= 40 V, d i
= 25 V, R
DS
F
I
17.5 A
GS
D
/d t = 200 A/µs
= 25
R
0.1
DS(on)
1
Symbol
I
I
E
d v /d t
V
P
T
T
R
R
D
Dpuls
j
stg
AS
GS
tot
thJC
thJA
Package
TO-220 AB
Pin 1
G
-55 ... + 175
-55 ... + 175
55 / 175 / 56
Values
E
17.5
Ordering Code
C67078-S1353-A2
70
35
60
6
2.5
20
75
Pin 2
D
BUZ 104
07/96
Unit
A
mJ
kV/µs
V
W
°C
K/W
Pin 3
S

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BUZ104 Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type V DS BUZ 104 50 V Maximum Ratings ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage -40 ° Gate threshold voltage DS, D Zero gate voltage drain ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...

Page 5

Power dissipation tot tot 100 120 140 Safe operating area ...

Page 6

Typ. output characteristics parameter µ 60W tot 0.0 1.0 2.0 3.0 Typ. transfer ...

Page 7

Drain-source on-resistance (on) j parameter 12 0.28 0.24 R 0.22 DS (on) 0.20 0.18 0.16 0.14 98% 0.12 0.10 typ 0.08 0.06 0.04 0.02 0.00 ...

Page 8

Avalanche energy parameter 17 114 µ ...

Page 9

Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 104 07/96 ...

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