BUZ104 Siemens Semiconductor Group, BUZ104 Datasheet - Page 8

• Manufacturer Part Number: BUZ104
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 114 µH
mJ
36
28
24
20
16
12
62
60
59
58
57
56
55
54
53
52
51
50
49
48
47
V
8
4
0
-60
20
= ( T
D
40
-20
= 17.5 A, V
j
)
60
20
80
AS
= ( T
DD
100
60
= 25 V
j
120
)
100
140
°C
T
T
°C
j
j
180
180
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
2
)
4
= 26 A
0,2
6
V
DS max
8
10
12
BUZ 104
0,8
14
07/96
V
Q
DS max
nC
Gate
18