BUZ12AL Siemens Semiconductor Group, BUZ12AL Datasheet
BUZ12AL
Related parts for BUZ12AL
BUZ12AL Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V DS BUZ Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P 100 tot Safe operating area ...
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Typ. output characteristics parameter µs p 100 P = 125W tot 0.0 ...
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Drain-source on-resistance (on) j parameter 0.09 R 0.07 DS (on) 0.06 0.05 98% 0.04 typ 0.03 0.02 0.01 0.00 -60 - Typ. ...
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Avalanche energy parameter 23.2 µ ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group Not for new design 9 BUZ 12 AL 07/96 ...