BUZ12AL Siemens Semiconductor Group, BUZ12AL Datasheet - Page 3

• Manufacturer Part Number: BUZ12AL
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics, at T
Semiconductor Group
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
= 30 V, V
= 50
2
*
I
D *
R
DS
DS
DS
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
D
D
D
D
I
D
= 3 A
= 3 A
= 3 A
= 3 A
= 21 A
j
= 25°C, unless otherwise specified
3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
-
-
-
-
-
-
-
16
Values
typ.
30
2100
800
280
45
160
270
160
Not for new design
max.
-
2800
1200
450
60
240
350
200
BUZ 12 AL
07/96
Unit
S
pF
ns