MT16LD1664AG-6 Micron, MT16LD1664AG-6 Datasheet - Page 10

• Manufacturer Part Number: MT16LD1664AG-6
• Description: DRAM, 128MB 16MX64 DRAM MODULE 168PIN DIMM PACKAGE 3.3V EDO UN BUFFERED 50NS27 pages, 508.8 KbOriginal
• Manufacturer: Micron

I
(Notes: 1, 5, 6) (V
CAPACITANCE
8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs
DM78.p65 – Rev. 2/99
CC
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
STANDBY CURRENT: CMOS
(RAS# = CAS# = V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS# = V
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
PARAMETER
Input Capacitance: A0-A11
Input Capacitance: WE0#, WE2#, OE0#, OE2#
Input Capacitance: RAS0#-RAS3#
Input Capacitance: CAS0#-CAS7#
Input Capacitance: SCL, SA0-SA2
Input/Output Capacitance: DQ0-DQ63, SDA
OPERATING CONDITIONS AND MAXIMUM LIMITS
IL
, CAS#, address cycling:
DD
DD
IH
= +3.3V ±0.3V)
)
- 0.2V)
IH
:
t
RC =
t
t
RC =
RC =
t
RC [MIN])
t
PC =
t
t
RC [MIN])
RC [MIN])
t
PC [MIN])
10
SYMBOL SIZE
SYMBOL 64MB 128MB 256MB UNITS NOTES
NONBUFFERED DRAM DIMMs
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C
C
C
C
C
C
CC
CC
CC
CC
CC
CC
IO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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1
2
3
4
5
1
2
3
4
5
6
128MB
256MB
128MB
256MB
128MB 2,720
256MB 2,736
128MB 2,400
256MB 2,416
128MB 2,720
256MB 2,736
128MB 2,560
256MB 2,576
64MB
64MB
64MB
64MB
64MB
64MB
46
32
32
10
12
6
8, 16, 32 MEG x 64
MAX
1,400
1,240
1,400
1,320
16
32
16
86
60
60
18
12
-5
8
4
8
6
MAX
1,320
2,560
2,576
1,000
1,920
1,936
1,320
2,560
2,576
1,240
2,400
2,416
168
118
16
32
16
60
32
22
-6
8
4
8
6
UNITS NOTES
©1999, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
p F
p F
p F
p F
p F
p F
3, 24
3, 24
3, 24
3, 4
2
2
2
2
2
2