MT16VDDF12864HG-26A Micron, MT16VDDF12864HG-26A Datasheet - Page 16

• Manufacturer Part Number: MT16VDDF12864HG-26A
• Description: DRAM_Module, high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration
• Manufacturer: Micron

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 19–22; 0°C £ T
09005aef80a646bc
DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-335, -262) (Continued)
DD
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
t
RPRE
REFC
RPST
t
WTR
RCD
RRD
REFI
VTD
t
t
NA
RFC
WR
RC
RP
16
A
MIN
£ +70°C; V
0.25
200
0.9
0.4
0.4
60
72
18
18
12
15
75
0
1
0
t
QH -
-335
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ
MAX
70.3
DD
1.1
0.6
0.6
7.8
= V
DD
200-PIN DDR SODIMM
Q = +2.5V ±0.2V
MIN
0.25
200
0.9
0.4
0.4
60
75
15
15
15
15
75
0
1
0
t
QH -
512MB, 1GB (x64)
-262
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
©2003, Micron Technology Inc.
t
t
t
t
t
t
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
ADVANCE
NOTES
18, 19
44
37
17
22
21
21