MT18VDDF12872HY-40B Micron, MT18VDDF12872HY-40B Datasheet

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MT18VDDF12872HY-40B

Manufacturer Part Number
MT18VDDF12872HY-40B
Description
1GB DDR SDRAM SODIMM
Manufacturer
Micron
Datasheet
DDR SDRAM SMALL-
OUTLINE DIMM
Features
• 200-pin, small-outline, dual in-line memory
• Fast data transfer rates: PC3200
• Utilizes 400 MT/s DDR SDRAM components
• Supports ECC error detection and correction
• 1GB (128 Meg x 72)
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
module (SODIMM)
aligned with data for WRITEs
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.6V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
1
NOTE:
Table 1:
MT18VDDF12872H – 1GB
For the latest data sheet, please refer to the Micron
site:
OPTIONS
• Package
• Frequency/CAS Latency
• PCB Height
Height 1.25in. (31.75mm)
Refresh Count
Device Row Addressing
Device Bank Addressing
Device Configuration
Device Column Addressing
Module Rank Addressing
Figure 1: 200-Pin SODIMM (MO-224)
200-pin SODIMM (standard)
200-pin SODIMM (lead-free)
200 MHz (400 MT/s) CL = 3
1.25in. (31.75mm)
www.micron.com/products/modules
1. Contact Micron regarding product availability.
2. CL = CAS (READ) latency.
1GB (x72, ECC, DR) PC3200
Address Table
200-PIN DDR SODIMM
2
1
512Mb (64 Meg x 8)
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
©2004 Micron Technology, Inc.
1GB
8K
MARKING
-40B
G
Y
Web

Related parts for MT18VDDF12872HY-40B

MT18VDDF12872HY-40B Summary of contents

Page 1

... Programmable READ CAS latency • Gold edge contacts pdf: 09005aef80e4880c, source: 09005aef80e487d7 DDAF18C128x72HG.fm - Rev. A 10/04 EN PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 1GB (x72, ECC, DR) PC3200 200-PIN DDR SODIMM MT18VDDF12872H – 1GB For the latest data sheet, please refer to the Micron site: www ...

Page 2

... Part Numbers and Timing Parameters PART NUMBER MODULE DENSITY MT18VDDF12872HG-40B__ MT18VDDF12872HY-40B__ NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDF12872HG-40BA1. pdf: 09005aef80e4880c, source: 09005aef80e487d7 DDAF18C128x72HG.fm - Rev. A 10/04 EN ...

Page 3

... DQ22 100 A11 150 V SS U11 U12 U13 U15 U16 U17 U18 (all even pins) pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. PIN SYMBOL 152 DQ46 154 DQ47 156 V DD 158 CK1# 160 CK1 162 V SS ...

Page 4

... DQS is edge-aligned with READ data, centered in WRITE data. Used to capture data. CB0–CB7 Input/ Check Bits. Output 4 1GB (x72, ECC, DR) PC3200 200-PIN DDR SODIMM DESCRIPTION is applied and until DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. ...

Page 5

... Do Not Use: These pins are not connected on this module, but are assigned pins on other modules in this product family. 5 1GB (x72, ECC, DR) PC3200 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. ...

Page 6

... U11, U12, U15 CK1# 120 U6, U7, U8, CK2 U16, U17, U18 CK2# SPD/EEPROM SERIAL PD SCL U10 DDR SDRAMs DDR SDRAMs SA0 SA1 SA2 DDR SDRAMs Micron Technology, Inc., reserves the right to change products or specifications without notice. SDA ©2004 Micron Technology, Inc. ...

Page 7

... Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or inter- leaved), A4–A6 specify the CAS latency, and A7–A12 specify the operating mode. Micron Technology, Inc., reserves the right to change products or specifications without notice bus using the ...

Page 8

... M12 M11 M10 Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus Mode Register (Mx) Burst Length Burst Length Reserved ...

Page 9

... T2 CK# CK READ NOP NOP DQS DQ Burst Length = 4 in the cases shown Shown with nominal t AC, t DQSCK, and t DQSQ TRANSITIONING DATA Micron Technology, Inc., reserves the right to change products or specifications without notice. T2n T3 T3n NOP T2n T3 T3n NOP T2n T3 T3n NOP DON’ ...

Page 10

... NOTE: 1. BA1 and BA0 (E14 and E13) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. QFC# is not supported. Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus ...

Page 11

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 ADDR NOTES Bank/Row 2 Bank/Col 3 Bank/Col Code Op-Code 8 DM DQS L Valid H X ©2004 Micron Technology, Inc. ...

Page 12

... +2.6V ±0.1V DD MIN MAX UNITS + 0.310 – V – 0.310 V REF Micron Technology, Inc., reserves the right to change products or specifications without notice. Q +0.5V DD UNITS NOTES V 31, 35 31, 35, 38 µA 45 µ 32, 33 ...

Page 13

... 6,210 DD5 b I 198 DD5A DD6 a I 4,095 DD7 2p (CKE LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES 21, 28 21 24, 42 ...

Page 14

... IS 0 IPW 2.20 t MRD QHS t RAS 40 t RAP RFC 70 Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 200-PIN DDR SODIMM SYMBOL MIN MAX 13 +2.6V ±0.1V DD -40B MAX UNITS +0 ...

Page 15

... WPST 0.4 0 WTR DQSQ t REFC 70.3 t REFI 7.8 t VTD 0 t XSNR 75 t XSRD 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 UNITS NOTES 17 µs 21 µs 21 ...

Page 16

... RC or RFC) for I measurements is the that meets the minimum measurements is the largest multi that meets the maximum absolute t RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice has unaf- stabi- REF REF t DQSH t RAS ...

Page 17

... The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 8, Pull-Up Characteristics. 0.5 1.0 1 (V) DD OUT Micron Technology, Inc., reserves the right to change products or specifications without notice minimum 2.0 2.5 ©2004 Micron Technology, Inc. ...

Page 18

... Any noise above 20MHz at the DRAM generated from any source other than that of the DRAM itself may not exceed the DC voltage range of +2.6V ±0.1V. Micron Technology, Inc., reserves the right to change products or specifications without notice. TT ©2004 Micron Technology, Inc. ...

Page 19

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 200-PIN DDR SODIMM V and V Q Ramp DD DD Apply V and V REF TT CKE must be LVCMOS Low Apply stable CLOCKs Wait at least 200us Bring CKE High with a NOP command ...

Page 20

... NOTE: 1. Micron Technology, Inc. recommends a minimum air flow of 1 meter/second (~197 LFM) across all modules. 2. The component case temperature measurements shown above were obtained experimentally. The typical system to be used for experimental purposes is a dual-processor 600 MHz work station, fully loaded, with four comparable registered memory modules ...

Page 21

... Figure 12: Definition of Start and Stop SCL SDA DATA STABLE Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 1GB (x72, ECC, DR) PC3200 200-PIN DDR SODIMM START BIT ...

Page 22

... DH 22 1GB (x72, ECC, DR) PC3200 200-PIN DDR SODIMM CHIP ENABLE SA2 SA1 1 0 SA2 SA1 t SU:DAT t SU:STO Micron Technology, Inc., reserves the right to change products or specifications without notice SA0 RW SA0 RW t BUF UNDEFINED ©2004 Micron Technology, Inc. ...

Page 23

... LOW 1 0.3 f SCL 400 KHz t SU:DAT 100 t SU:STA 0.6 t SU:STO 0.6 t WRC 10 ms Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS V + 0 µA µA µA mA NOTES µs 1 µ µs µs µs ns µs µ µs 3 µ ...

Page 24

... PC 2100 and PC 1600 system compatibility) 15ns (-40B) 10ns (-40B) 15ns (-40B) 40ns (-40B) 512MB 0.6ns (-40B) 0.6ns (-40B) 0.4ns (-40B) 0.4ns (-40B) Micron Technology, Inc., reserves the right to change products or specifications without notice ...

Page 25

... DDAF18C128x72HG.fm - Rev. A 10/04 EN 1GB (x72, ECC, DR) PC3200 ENTRY (VERSION MAX t DQSQ t QHS Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 200-PIN DDR SODIMM MT18VDDF12872H 55ns (-40B) 37 70ns (-40B) 46 12ns (-40B) 30 0.4ns (-40B) 28 0.5ns (-40B) ...

Page 26

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. All other trademarks are the property of their respective owners. ...

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