MT18VDDT12872PHG-265 Micron, MT18VDDT12872PHG-265 Datasheet - Page 14
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MT18VDDT12872PHG-265
Manufacturer Part Number
MT18VDDT12872PHG-265
Description
1GB DDR SDRAM SODIMM
Manufacturer
Micron
Datasheet
1.MT18VDDT12872PHG-265.pdf
(28 pages)
Table 13: Capacitance
Note: 11; notes appear on pages 16–19
Table 14: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM components only; notes appear on pages 16–19
Notes: 1–5, 12–15, 29, 46; 0 C
pdf: 09005aef81697898/source: 09005aef8169786e
DD18C128x72PHG.fm - Rev. A 10/04 EN
PARAMETER
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address
Input Capacitance: S#
Input Capacitance: CK, CK#
Input Capacitance: CKE
PARAMETER
Access window of DQ from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each
input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per
group, per access
Write command to first DQS latching
transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/
CK#
Data-out low-impedance window from CK/
CK#
Address and control input hold time (1 V/ns)
Address and control input setup time (1 V/ns)
Address and control input hold time (0.5 V/ns)
Address and control input setup time (0.5 V/ns)
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle time
AC CHARACTERISTICS
T
A
CL = 2.5
CL = 2
+70 C; V
DD
SYMBOL
t
t
CK (2.5)
t
t
DQSCK
t
t
t
t
= V
t
CK (2)
DQSH
DQSQ
DIPW
DQSL
DQSS
t
t
t
MRD
t
t
t
DSH
t
t
t
t
t
IPW
t
DSS
t
t
t
DH
AC
CH
IH
IH
DS
HP
HZ
CL
LZ
IS
IS
DD
F
S
F
S
Q = +2.5V ±0.2V
-0.70
-0.60
-0.70
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.20
0.20
0.75
0.75
7.5
0.8
0.8
2.2
12
6
14
t
CH,
-335
t
CL
+0.70
+0.60
+0.70
MAX
0.55
0.55
1.25
0.4
13
13
SYMBOL
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C
C
C
C
C
IO
I 1
I 2
I 3
I 4
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.20
0.20
0.90
0.90
7.5
7.5
0.5
0.5
2.2
15
1
1
t
CH,
-262
t
CL
MAX
+0.75
+0.75
+0.75
0.55
0.55
1.25
0.5
13
13
MIN
1GB (x72, ECC, PLL)
36.0
18.0
18.0
8.0
-
7.5/10
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
7.5
0.5
0.5
0.2
0.2
2.2
15
-26A/-265
1
1
t
CH,
©2004 Micron Technology, Inc. All rights reserved.
TYP
7.7
-
-
-
-
t
+0.75
CL
+0.75
MAX
0.75
0.55
0.55
1.25
0.5
13
13
MAX
10.0
54.0
27.0
27.0
-
UNITS NOTES
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
UNITS
pF
pF
pF
pF
pF
39, 44
39, 44
23, 27
23, 27
22, 23
16, 36
16, 37
26
26
27
31
12
12
12
12