MT28F004B5-1 Micron, MT28F004B5-1 Datasheet - Page 15

• Manufacturer Part Number: MT28F004B5-1
• Description: FLASH MEMORY
• Manufacturer: Micron

WRITE/ERASE CYCLE ENDURANCE
and fabricated to meet advanced firmware storage
requirements. To ensure this level of reliability, V
must be at 5V ±10% during WRITE or ERASE cycles.
Due to process technology advances, 5V V
for application and production programming.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down
mode is enabled by bringing RP# LOW. Current draw
(I
When CE# is HIGH, the device enters standby mode. In
this mode, maximum I
is brought HIGH during a WRITE or ERASE, the ISM
continues to operate, and the device consumes the
respective active power until the WRITE or ERASE is
completed.
4Mb Smart 5 Boot Block Flash Memory
MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
CC
The MT28F004B5 and MT28F400B5 are designed
The MT28F004B5 and MT28F400B5 offer several
) in this mode is a maximum of 20µA at 5V V
CC
current is 130µA at 5V. If CE#
PP
is optimal
SMART 5 BOOT BLOCK FLASH MEMORY
CC
PP
.
15
POWER-UP
tions is minimized because two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
is ramping, one of the following conditions must be
met:
reset, and the device enters the array read mode.
The likelihood of unwanted WRITE or ERASE opera-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and
After a power-up or RESET, the status register is
Address
Power-Up/Reset Timing Diagram
tional level; or
RP# must be toggled from V
Data
RP#
(5V)
V
NOTE:
CC
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
Figure 2:
t
RWH
t
AA
VALID
CC
VALID
CC
-GND-V
is at valid func-
©2002, Micron Technology Inc.
UNDEFINED
CC
4Mb
.
CC