SHF-0189Z Sirenza Microdevices, SHF-0189Z Datasheet - Page 2

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SHF-0189Z

Manufacturer Part Number
SHF-0189Z
Description
GaAs HFET
Manufacturer
Sirenza Microdevices
Datasheet

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Typical Performance - Engineering Application Circuits (See App Note AN-031)
Data above represents typical performance of the application circuits noted in Application Note AN-031.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.sirenza.com or call your local sales representative.
* P
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the bias condition should also
satisfy the following expression:
where:
OUT
(MHz)
Freq
2140
2450
1960
900
1.50
1.25
1.00
0.75
0.50
0.25
0.00
= +15dBm per tone, 1MHz tone spacing
MTTF @ T
-40
P
P
T
T
R
J
L
DC
DC
TH
= Junction Temperature (°C)
= Lead Temperature (pin 4) (°C)
= I
< (T
= Thermal Resistance (°C/W)
-15
DS
V
(V)
J
8
8
8
8
DS
* V
J
- T
=150C exceeds 1E7 hours
Operational (Tj<150C)
ABS MAX (Tj<165C)
DS
L
Lead Temperature (C)
) / R
Power Derating Curve
10
(W)
TH
(mA)
100
100
100
100
35
I
DQ
60
Absolute Maximum Ratings
(dBm)
P1dB
27.2
27.6
27.5
27.3
85
Phone: (800) SMI-MMIC
110
(dBm)
OIP3*
40
40
40
40
2
SHF-0189 0.5 Watt HFET
135
Drain Current
Forward Gate Current
Reverse Gate Current
Drain-to-Source Voltage
Gate-to-Source Voltage
RF Input Power
Operating Lead Temperature
Storage Temperature Range
Power Dissipation
Channel Temperature
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
specified in the table on page 1.
voltage and current must not exceed the maximum operating values
160
Parameter
Gain
(dB)
18.6
16.7
15.2
15.2
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
This area not recommended
for continuous reliable operation.
(dB)
S11
-25
-20
-24
-16
Symbol
P
T
I
I
V
V
P
GSR
I
GSF
T
T
DS
DISS
stor
DS
GS
IN
L
J
S22
(dB)
-13
-14
-14
-8
-40 to +150
See Graph
See Graph
<-5 or >0
Value
+165
+9.0
200
200
1.2
1.2
(dB)
4.7
NF
3.2
3.8
3.1
Unit
mW
mA
mA
mA
°C
°C
°C
http://www.sirenza.com
W
V
V
EDS-101240 Rev E

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