2SA2169 Sanyo Semicon Device, 2SA2169 Datasheet

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2SA2169

Manufacturer Part Number
2SA2169
Description
PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.2SA2169.pdf (5 pages)
DataSheet4U.com
www.DataSheet4U.com
DataSheet
Ordering number : ENN8275
4
2SA2169 / 2SC6017
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
U
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
•
•
•
•
•
.com
Relay drivers, lamp drivers, motor drivers.
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA2169
SANYO Electric Co.,Ltd. Semiconductor Company
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
I B
f T
Tj
2SA2169 / 2SC6017
PW 100 s
Tc=25 C
V CB =(--)40V, I E =0
V EB =(--)4V, I C =0
V CE =(--)2V, I C =(--)1A
V CE =(--)5V, I C =(--)1A
V CB =(--)10V, f=1MHz
I C =(--)5A, I B =(- -)250mA
I C =(--)5A, I B =(- -)250mA
DataSheet4U.com
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
Conditions
Conditions
32505EA TS IM TB-00001269
min
200
(130)200
(--290)180
Ratings
(--)0.93
typ
(90)60
Ratings
Continued on next page.
--55 to +150
(- -50)100
(560)700
(--580)360
max
(--)50
(--)10
(--)13
(--)1.4
(--)10
(--)10
0.95
(- -)6
(- -)2
150
20
No.8275-1/5
Unit
Unit
MHz
mV
pF
W
W
V
V
V
A
A
A
V
C
C
A
A

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2SA2169 Summary of contents

Page 1

... Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation ...

Page 2

... DataSheet4U.com 0 --0.5 Collector-to-Emitter Voltage DataSheet U .com 2SA2169 / 2SC6017 Symbol Conditions V (BR)CBO I C =(--)100 (BR)CEO I C =(--)1mA (BR)EBO I E =(- -)100 See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. ...

Page 3

... Collector-to-Base Voltage 100 DataSheet4U.com --0.01 --0.1 Collector Current DataSheet U .com 2SA2169 / 2SC6017 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT08963 2SA2169 -- --1.0 --10 DataSheet4U.com IT08965 2SA2169 f=1MHz ...

Page 4

... Collector Current (sat 1 0.01 0.1 1.0 Collector Current 1.0 2SA2169 / 2SC6017 0.95 0.8 0.6 0.4 0 100 120 Ambient Temperature 2SC6017 = IT08972 IT08974 2SC6017 =50 ...

Page 5

... This catalog provides information as of March, 2005. Specifications and information herein are subject DataSheet4U.com to change without notice. 4 DataSheet U .com 2SA2169 / 2SC6017 2SA2169 / 2SC6017 80 100 120 140 160 IT09362 DataSheet4U.com PS No.8275-5/5 ...

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